| PART |
Description |
Maker |
| UG42W6448GSG |
16M Bytes (2M x 64 bits) EDO Mode Unbuffered SODIMM 1,600字节米64位），江户模式缓冲的SODIMM
|
Electronic Theatre Controls, Inc.
|
| HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
| EDS2516CDTA-75-E EDS2516CDTA |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| HM5117405 |
(HM5116405 / HM5117405) 16M EDO DRAM
|
Hitachi
|
| M53231600CJ0-C50 |
16M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
|
| MC-4216LFC721FH-A60 |
16M X 72 EDO DRAM MODULE, 60 ns, PDMA168
|
|
| W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
| IBM0164405B |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）
|
International Business Machines, Corp.
|
| EDE2508ABSE-5C-E EDE2516ABSE-5C-E EDE2516ABSE-6E-E |
256M bits DDR2 SDRAM 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HB56UW3272ETK-5F HB56UW3272ETK-6F HB56UW3272ETK-F |
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword 隆驴 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M 隆驴 4 components)
|
Elpida Memory
|
