PART |
Description |
Maker |
IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位) Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28 Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位) CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28 Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28 CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28 Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70 Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85 Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75 CMOS Static RAM 256k ( 32k X 8-bit )
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INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Technolog...
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UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
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Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
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SRM20256L |
CMOS 256K-Bit Static RAM
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S-MOS Systems
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IDT71256L |
CMOS Static RAM 256K (32K x 8-Bit)
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List of Unclassifed Manufacturers
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IDT71028S70 IDT71028S70Y |
CMOS STATIC RAM 1 MEG (256K x 4-BIT)
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IDT[Integrated Device Technology]
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IDT71028 IDT71028S12Y IDT71028S15Y IDT71028S17Y ID |
CMOS STATIC RAM 1 MEG (256K x 4-BIT)
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IDT[Integrated Device Technology]
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K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256K X 4 STANDARD SRAM, 8 ns, PDSO32 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的)在商业和工业温度范围操作 TV 23C 21#20 2#16 SKT PLUG REC 64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges TV 55C 55#22D SKT PLUG RECP
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
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NEC http://
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UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
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NEC[NEC]
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