| PART |
Description |
Maker |
| HY5PS561621F |
256Mb DDR2 SDRAM
|
Hynix
|
| HY5PS561621BFPC4 HY5PS561621BFPE3 HY5PS561621BFPS5 |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| EBE25UC8AAFA EBE25UC8AAFA-4C-E EBE25UC8AAFA-5C-E E |
256MB Unbuffered DDR2 SDRAM DIMM
256MB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB
DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
