| PART |
Description |
Maker |
| IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| K8D6316UTM-PC07 K8D638UTM-PC07 K8D6X16UTM06 K8D6X1 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| IBM13M8734HCB |
8M x 72 1 Bank Registered SDRAM Module with PLL(8M x 72 1组带锁相环的寄存同步动态RAM模块)
|
IBM Microeletronics
|
| EBE51RD8AGFA-6E-E EBE51RD8AGFA-5C-E EBE51RD8AGFA-4 |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
Elpida Memory, Inc.
|
| V827464N24S |
2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| EBE51RD8AEFA-5C-E EBE51RD8AEFA EBE51RD8AEFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMP264R72L4-Y5 HYMP264R72L4-E3 HYMP264R72L4-Y6 HY |
64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
DDR2 SDRAM - Registered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| HB52F649E1 HB52F649E1-75B |
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM
|
Elpida Memory
|
