| PART |
Description |
Maker |
| SSTS20U60P5 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS2045 |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS20100D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CTL |
High Junction Temperature
|
Silikron Semiconductor ...
|
| TN4015H-6T |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SMA6J6.0A-TR SMA6J6.0CA-TR SMA6J6.5A-TR SMA6J6.5CA |
High junction temperature Transil
|
ST Microelectronics
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
From old datasheet system
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| MBR10H150CT MBRF10H150CT MBRB10H150CT-1 |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175C
Diodes
|
VISAY[Vishay Siliconix]
|
