| PART |
Description |
Maker |
| IRF9540 IRF9540RF1S9540SM |
19A 100V 0.200 Ohm P-Channel Power MOSFETs(100.75 k) 9A 100V0.200欧姆P沟道功率MOSFET00.75十一
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
Electronic Theatre Controls, Inc.
Fairchild Semiconductor
|
| IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| RFP12N10 RFP12N08 RFM12N10 RFM12N08 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs
12A 80V and 100V 0.200 Ohm N-Channel Power MOSFETs
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| APT4020BVR |
POWER MOS V 400V 23A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5020SVFR APT5020 |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IXFH12N100Q IXFT12N100Q IXFH10N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
