| PART |
Description |
Maker |
| IS61DDB21M36-250M3 IS61DDB22M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
| MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC14536BDWR2G MC14536BFELG |
Programmable Timer 1 TIMER(S), PROGRAMMABLE TIMER, PDSO16
Programmable Timer 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, PDSO16
|
Rectron Semiconductor
|
| ICM7240IPE |
8-Bit Binary, Programmable, RC Timer Counter PULSE; RECTANGULAR, TIMER, PDIP16
|
Maxim Integrated Products, Inc.
|
| M51849 M51849FP M51849L M51849E |
RECTANGULAR, TIMER, PDSO10
CAP 22UF 25V ELECT KMG RAD
COUNTER TIMER
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
