| PART |
Description |
Maker |
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HY57V56420AT-H |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HYM72V64756AT8-8 HYM72V64756AT8-S |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
| HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL |
64M SDRAM Component
64-MBit Synchronous DRAM
|
Infineon Technologies A...
|
| EDE1108ACSE EDE1108ACSE-5C-E EDE1108ACSE-6E-E EDE1 |
64M X 16 SYNCHRONOUS DRAM, 0.4 ns, PBGA84
1G bits DDR2 SDRAM
|
ELPIDA MEMORY INC
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 |
From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life
64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
