| PART |
Description |
Maker |
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| C62702-C941 C62702-C942 C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
SIEMENS AG
Siemens Semiconductor Group
|
| CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| NP110N04PUG-AZ |
110 A, 20 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, MP-25ZP, 3 PIN
|
Cypress Semiconductor, Corp.
|
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| 5506 55060181400 |
1 ELEMENT, 0.0018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Wire Wound Chip Inductors
|
Sumida Corporation
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
