| PART |
Description |
Maker |
| RJH1CM5DPQ-E0-15 |
1200V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| 6MBI15S-120 |
IGBT MODULE ( S series)1200V / 15A
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| FGW15N120H |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| RJH1CV5DPQ-E013 |
1200V - 25A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CV5DPQ-E0 |
1200V - 25A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CD7DPQ-E0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CV7DPQ-E013 |
1200V - 35A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CV7DPK-00T0 |
1200V - 35A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| IRG4PH40KD |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
|
IRF[International Rectifier]
|
| SGB07N120 SGP07N120 |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 7A 1200V TO263AB SMD IGBT
IGBTs & DuoPacks - 7A 1200V TO 220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
