| PART |
Description |
Maker |
| P4KE11 P4KE10 P4KE100 P4KE20 P4KE27 P4KE33 P4KE180 |
400 Watt Transient Voltage Suppressors 6.8 to 400 Volts
400 Watt Transient Voltage Suppressors 6.8 to 400 Volts 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| RA30H4047M RA30H4047M-01 RA30H4047M-E01 |
400-470MHz 30W 12.5V MOBILE RADIO 400 - 470MHz的功0W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| SDR4N SDR4J SDR4G |
3 AMP 400-1200 50-80nsec ULTRA FAST RECTIFIER 3 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| SF164C SF163C SF165C SF166C SF161C SF162C |
GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes) 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
|
RECTRON[Rectron Semiconductor]
|
| RA60H4047M1-101 RA60H4047M1 |
400 MHz - 470 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
400-470MHZ 60W 12.5V, 2 STAGE AMP. FOR MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
|
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| RM400HA-34 RM400HA-34S |
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts) 400 A, 1700 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
