| PART |
Description |
Maker |
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| RCMT0221501BES03 RCMT2057602FHB25 VISHAYSFERNICE-R |
Film/Foil Resistor, RES,AXIAL,METAL FILM,21.5K OHMS,300WV,.1% /-TOL,-25,25PPM TC
RCMT Molded Metal Film High Stability (< 0.25 % after 1000 h) High Temperature (up to 175 °C) Precision Resistors
Film/Foil Resistor, RES,AXIAL,METAL FILM,82.5 OHMS,350WV,.1% /-TOL,-15,15PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,24.9K OHMS,200WV,1% /-TOL,-50,50PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,10K OHMS,400WV,1% /-TOL,-50,50PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,100K OHMS,400WV,1% /-TOL,-25,25PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,100 OHMS,400WV,.1% /-TOL,-15,15PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,104K OHMS,400WV,.1% /-TOL,-15,15PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,18K OHMS,300WV,.1% /-TOL,-25,25PPM TC
Film/Foil Resistor, RES,AXIAL,METAL FILM,2.1K OHMS,200WV,.5% /-TOL,-50,50PPM TC
|
Vishay Sfernice
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| PE-S330 |
COAXIAL BULK CABLE IMPEDANCE;100 OHMS
|
Pasternack Enterprises, Inc.
|
| CR0402-JW8252G CR0402-FX-1002G |
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .063 W RESISTOR, 0.0625 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0402
|
Bourns Inc.
Bourns, Inc.
Bourns Electronic Solut...
|
| APT26F120L APT26F120B2 APT26F120B209 |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
|
Microsemi, Corp.
Microsemi Corporation
|
| FDS3672 |
100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFET
|
Fairchild Semiconductor
|
| FDP120AN15A0 FDD120AN15A FDD120AN15A0 FDD120AN15A0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 Ohms @ VGS = 10V, TO-220 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| RT012AS6800KB VISHAYSFERNICE-RT012AS2600KB RT012AS |
Potentiometer, RES,TAPPED,WIREWOUND,680 OHMS,90.3WVDC,10% /-TOL
Potentiometer, RES,TAPPED,WIREWOUND,150 OHMS,42.4WVDC,10% /-TOL
Potentiometer, RES,TAPPED,WIREWOUND,330 OHMS,62.9WVDC,10% /-TOL
|
Vishay Sfernice
|
| IRF730 FN1580 |
BEAD,FERRITE,1000 OHMS, /-25%,100MA,0603
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
From old datasheet system
|
Intersil Corporation
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
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