| PART |
Description |
Maker |
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP640F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU760F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| 2N404 |
JUNCTION TRANSISTOR Germanium p-n-p Alloy Type
|
New Jersey Semi-Conductor Products, Inc.
|
