| PART |
Description |
Maker |
| M14128 D10 D22 ST1331 ST1336 ST14C02C C20 C30 D15 |
Memory Card IC 256/128 Kbit Serial IC Bus EEPROM
Memory Micromodules General Information for D1/ D2 and C Packaging
Memory Micromodules General Information for D1, D2 and C Packaging
Memory Micromodules General Information for D1 D2 and C Packaging
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 24AA01T 24LC01T-I_STG 24AA01 24AA01-E_MSG 24AA01-E |
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible ...
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC01B features hardware write protect, Schmitt trigger inputs, 400
1K I2C Serial EEPROM
1K/2K I2CSerial EEPROMs in ISO Micromodules
|
MICROCHIP[Microchip Technology]
|
| 24LC16B-MT 24LC08B 24LC08B-MT |
8K/16K I 2 C Serial EEPROMs in ISO Micromodules
|
MICROCHIP[Microchip Technology]
|
| 24LC16 24LC16B 24LC16B-MT 24LC08B-MT 24LC08BMODULE |
8K/16K I 2 C Serial EEPROMs in ISO Micromodules 8K/16K的I 2 C⑩在ISO微型模块串行EEPROM
16K IIC Serial EEPROMs in ISO micromoduls(16K1M次擦写周ISO模块)
8K/16K IIC Sserial EEPROMs in ISO micromoduls(8K1M次擦写周ISO模块)
8K/16K I 2 C ?Serial EEPROMs in ISO Micromodules
8K/16KI2CSerialEEPROMsinISOMicromodules
|
Microchip Technology, Inc.
MicrochipTechnology
Microchip Technology Inc.
http://
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IHB2EB1R0M IHB6BV6R8M IHB2BV121K IHB6BV123K IHB2BV |
General Fixed Inductor, 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,WIREWOUND,6.8UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,120UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,12MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2UH,20% TOL,20% -TOL
IND FLTR 33UH 20% 1KHZ 13.5A RDL - Bulk
General Fixed Inductor, IND,WIREWOUND,390UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,3.3UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,820UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,22UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,10MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,18UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,150UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.5MH,10% TOL,10% -TOL
|
Vishay Dale
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| MN101C62F MN101C62D MN101C62 |
Microcomputer - 8bit - General Purpose
LQFP080-P-1414A(Pb Free)
The lower limit for operation guarantee for flash memory built-in type is 2.5 V 8-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP80
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Panasonic Corporation
Panasonic, Corp.
|
| M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|
| AT88SC0404CA-MJ88SC0404 AT88SC0404CA-MP88SC0404 AT |
SPECIALTY MEMORY CIRCUIT, QMA
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT WAFER
SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8
SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8
|
Atmel, Corp.
ATMEL CORP
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