| PART |
Description |
Maker |
| NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
| 1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
10 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
12 V, 500 mA, gold bonded germanium diode
50 V, 500 mA, gold bonded germanium diode
75 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
125 V, 500 mA, gold bonded germanium diode
85 V, 500 mA, gold bonded germanium diode
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
BKC International Electronics
List of Unclassifed Man...
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJF6668 ON2050 MJF6388 MJF6688 |
Complementary power darlington
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor]
Motorola, Inc
MOTOROLA INC
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
| OA1182 |
GERMANIUM DIODE
|
BK
|
| 2N200 |
P-N-P GERMANIUM TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
