PART |
Description |
Maker |
MCR100-6RLRA MCR100-6RLRM MCR100-6RLRMG MCR100-6RL |
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 400 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 200 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 600 V, SCR, TO-92
|
ONSEMI[ON Semiconductor]
|
NTE5566 NTE5564 NTE5562 NTE5563 |
Silicon Controlled Rectifiers (SCRs) Silicon Controlled Rectifiers (SCR’s)
|
NTE[NTE Electronics]
|
TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM) Silicon controlled rectifiers From old datasheet system
|
ST Microelectronics
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase) Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation Microsemi, Corp.
|
C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V. 4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State GESS[GE Solid State] http://
|
BT151F-600 |
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
WCP10C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
WCP20C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
WCD12C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
2N4361 2N4362 2N4363 2N4364 2N4365 2N4366 2N4367 2 |
Silicon Controlled Rectifiers
|
Microsemi Corporation
|
WCPA25C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|