| PART |
Description |
Maker |
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC
HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|
| MUX28 MUX-16AT MUX28AT/883 |
8-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP28
16-Channel/Dual 8-Channel JFET Analog Multiplexers(Overvoltage Protected)
|
ANALOG DEVICES INC
AD[Analog Devices]
|
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
|
| SIZ704DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs
9.4 A, 30 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
| SIZ730DT-T1-GE3 |
N-Channel 30 V (D-S) MOSFETs
35 A, 30 V, 0.0053 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| SIZ710DT-T1-GE3 |
N-Channel 20 V (D-S) MOSFETs
16 A, 20 V, 0.0068 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.73 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
