| PART |
Description |
Maker |
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BC328 BC327 BC327-16 BC328-16 BC327-25 BC327-40 Q6 |
Si-Epitaxial PlanarTransistors
From old datasheet system
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益高集电极电流低集电极发射极饱和电压
|
SIEMENS A G
Diotec Elektronische
Infineon
Diotec Semiconductor
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
|
| UPS4602L-D08-T UPS4602G-D08-T |
HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION
|
Unisonic Technologies
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| HM62V8512B HM62V8512BLFP-7 HM62V8512BLFP-7SL HM62V |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Quadruple Bus Buffer Gate With 3-State Outputs 14-PDIP -40 to 85
4 M SRAM (512-kword x 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
|
