| PART |
Description |
Maker |
| 2SD1005 |
1A , 100V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CSD667C |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE
|
Continental Device India Limited
|
| MJF31C MJF31CG MJF32C MJF32CG MJF31C-08 |
Complementary Silicon Plastic Power Transistors
Bipolar Power T0220FP NPN 3A 100V ; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| MJD31CQ MJD31CQ-13 MJD31CQ-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
|
Diodes Incorporated
|
| SCS914DSTL |
0.3A , 100V Plastic-Encapsulated Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
| 2SD2142 |
NPN Plastic Plastic-Encapsulate Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| CJF107 |
80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. Complementary CJF102
|
Continental Device India Limited
|
| FZT853 |
100V NPN MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| 2SD667AB 2SD667 |
Silicon NPN Transistor
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|2VAR
|
Hitachi Semiconductor
KEMET Corporation
|
| ZXTN25100DZTA ZXTN25100DZ ZXTN25100DZ-15 |
100V NPN high gain transistor in SOT89
|
Zetex Semiconductors
Diodes Incorporated
|
