| PART |
Description |
Maker |
| BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基（双）二极
SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Comchip Technology
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| MMBD452LT1G MMBD452LT1G09 |
Dual Hot-Carrier Diodes Schottky Barrier Diodes
|
ON Semiconductor
|
| MBD110DWT1 MBD330DWT1 |
Dual Schottky Barrier Diodes
|
Guangdong Kexin Industrial Co.,Ltd
|
| BAT54SWG-AL3-R BAT54SWL-AL3-R |
SCHOTTKY BARRIER (DUAL) DIODES
|
Unisonic Technologies
|
| MBD110DWT1G07 |
Dual Schottky Barrier Diodes
|
ON Semiconductor
|
| MBD110DWT1 MBD330D MBD770DWT1 MBD330DWT1 |
Dual Schottky Barrier Diodes
|
MOTOROLA[Motorola, Inc]
|
| BAS70SV |
70V Dual Schottky Barrier Diodes
|
Fairchild Semiconductor
|
| BAT54RSLT1 |
Dual Series Schottky Barrier Diodes
|
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
| LBAT54SLT1G-15 |
Dual Series Schottky Barrier Diodes
|
Leshan Radio Company
|
| BAT54SLT1G BAT54SLT1 |
Dual Series Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
