PART |
Description |
Maker |
MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|