| PART |
Description |
Maker |
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3944 |
65W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-09000P-15 |
GaN Wideband 90 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| UPC1688G UPC1688G-T1 UPC1688G-T2 UPC1688G-T2-A |
1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MINIMOLD, 4 PIN
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOT-143R,4PIN,PLASTIC
5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC 5伏，1.1 GHz的宽频带及平坦增益放大器单片
|
NEC[NEC]
NEC Electronics Corp
NEC Corp.
NEC, Corp.
|
