| PART |
Description |
Maker |
| IPB014N06N IPB010N06N IPB026N06N IPP020N06N IPP040 |
New OptiMOS 40V and 60V
New OptiMOS?/a> 40V and 60V
|
Infineon Technologies AG
|
| SPB100N04S2L-03 SPP100N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPB04N03LA IPP04N03LA IPI04N03LA |
OptiMOS 2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL
OptiMOS®2 - Power packages
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IPI05N03LA IPP05N03LA IPB05N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 5.2mOhm, 80A, LL
OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| BSO301 BSO301SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSL307SP |
OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, TSOP-6
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m
OptiMOS-P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| A223 BSA223SP |
OptiMOS-P Small-Signal-Transistor OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SC-75, Ron = 1.2
|
INFINEON[Infineon Technologies AG]
|
| BSL316C |
OptiMOS 2 OptiMOS?P 2 Small Signal Transistor
|
Infineon Technologies AG
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| SPD30N03S2L-20 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL
OptiMOS Power-Transistor
|
Infineon Technologies AG
|
