| PART |
Description |
Maker |
| FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| IXFR80N15Q |
HiPerFET Power MOSFETs ISOPLUS247
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET)
|
IXYS Corporation
|
| IXFN200N06 IXFN200N07 IXFN180N06 IXFN180N07 |
60V HiPerFET power MOSFET
HiPerFET Power MOSFETs
|
IXYS[IXYS Corporation]
http://
|
| IXFN230N20T |
GigaMOS Power MOSFET
|
IXYS Corporation
|
| IXFK160N30T IXFX160N30T IXYSCORP-IXFX160N30T |
GigaMOS Power MOSFET
|
IXYS Corporation
|
| IXFN260N17T |
GigaMOS Power MOSFET
|
IXYS Corporation
|
| IXFN180N25T |
GigaMOS Power MOSFET
|
IXYS Corporation
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
