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BM6201FS - 600V PrestoMOS built-in Three phase brushless fan motor driver

BM6201FS_4646792.PDF Datasheet


 Full text search : 600V PrestoMOS built-in Three phase brushless fan motor driver
 Product Description search : 600V PrestoMOS built-in Three phase brushless fan motor driver


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PART Description Maker
BM6201FS BM6201FS-E2 600V PrestoMOS built-in Three phase brushless fan motor driver
Rohm
PS11034 Application Specific IPM Modules: 600V
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Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I 15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL 8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
EMA2 PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
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DTD113Z-AL3-6-R DTD113ZL-AE3-6-R DTD114E-AE3-R DTD NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) npn型数字晶体管(内置偏压电阻)
DIGITAL TRANSISTORS (BUILT- IN RESISTORS)
DIGITAL TRANSISTORS (BUILT-IN RESISTORS)
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
IRG4PC30K IRG4PC30KPBF 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
IRG4BC40U 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
International Rectifier
IRG4BC30U 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRF[International Rectifier]
IRG4BC40W IRG4BC40W-S 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
IRF[International Rectifier]
UN911CJ UN911BJ UN9118 UNR9118 UN9110 UNR9110 UN91 UNR911X Series (UN911X Series) - PNP Transistor with built-in Resistor
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Matsshita / Panasonic
STGB3NB60SD STGB3NB60SDT4 N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
 
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