| PART |
Description |
Maker |
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DP030 |
-300 mA, PNP silicon transistor
Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp]
KODENSHI KOREA CORP.
|
| DP500F |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| DN500P |
Extremely low collector-to-emitter saturation voltage
NPN Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor
Low Collector-Emtter Saturation Voltage & Large Collector Current
Feature
|
Fairchild Semiconductor
|
| 2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| ASM3P2853A ASM3P2853A_V0.7 ASM3P2853AF-08-ST ASM3P |
Peak EMI Reducing Solution
From old datasheet system
The el-EMI-nator? Series for Low-Power
|
ALSC[Alliance Semiconductor Corporation]
|
