| PART |
Description |
Maker |
| MB85396A-60 MB85396A-70 |
CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS分36位同步动态RAM）的
|
Fujitsu, Ltd.
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| MB8504S064AF-100 MB8504S064AF-84 MB8504S064AF-67 |
CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64同步动态RAM)
CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64同步动态RAM) 4米64位的CMOS同步动态随机存取存储器（SDRAM）的CMOS分64位同步动态RAM）的
|
Fujitsu Limited
Fujitsu, Ltd.
|
| GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V6684 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
From old datasheet system
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
x8 SDRAM x8 SDRAM内存
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYM72V32C736BLT8-K HYM72V32C736BT8-K HYM72V32C736B |
SDRAM - Registered DIMM 256MB
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
| HY57V281620HCT-H HY57V281620HCLT-K |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| KM416S4021AT |
CMOS SDRAM
|
Samsung Electronics
|
