PART |
Description |
Maker |
VBO36-12NO8 VBO20-16NO2 VBE20-20NO1 FBO40-12N VBO6 |
3 PHASE, 30 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 31 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) 20 A, 2000 V, SILICON, BRIDGE RECTIFIER DIODE Single Phase Rectifier Bridgein ISOPLUS i4-PAC-TM 40 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE Single Phase Rectifier Bridge 65 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
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IXYS, Corp. IXYS CORP
|
DBB04 DBB04C |
Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Single-Phase Bridge Rectifying Diodes
|
SANYO[Sanyo Semicon Device]
|
110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE 1200V 3 Phase Bridge in a INT-A-Pak package 1600V 3 Phase Bridge in a INT-A-Pak package 1000V 3 Phase Bridge in a INT-A-Pak package 1400V 3 Phase Bridge in a INT-A-Pak package 800V 3 Phase Bridge in a INT-A-Pak package THREE PHASE BRIDGE CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式 3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier] International Rectifier, Corp.
|
DBF60 DBF60G DBF60C |
6.0A Single-Phase Bridge Rectifier 6.0a下单相桥式整流器 High-Speed Rectifying Diodes Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
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PANJIT[Pan Jit International Inc.] PanJit International Inc.
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26MT140 26MT120 36MT80 26MT80 36MT120 26MT20 36MT1 |
THREE PHASE BRIDGE Power Modules 1200V 3 Phase Bridge in a D-63 package 50V 3 Phase Bridge in a D-63 package 1600V 3 Phase Bridge in a D-63 package 1400V 3 Phase Bridge in a D-63 package 1000V 3 Phase Bridge in a D-63 package 100V 3 Phase Bridge in a D-63 package 800V 3 Phase Bridge in a D-63 package THREEPHASEBRIDGEPowerModules THREE PHASE BRIDGE Power Modules 三相桥式电源模块
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IRF[International Rectifier] InternationalRectifier International Rectifier, Corp.
|
1102B 1106B 1110FB 1102UFB |
200 V - 1,000 V Single Phase Bridge 1.5 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
RS603M RS606M RS605M RS604M RS601M RS602M RS607M R |
6 Amp Single Phase Bridge Rectifier 50 to 1000 Volts SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes)
|
Micro Commercial Components RECTRON[Rectron Semiconductor]
|
MY400X MY100X MY200X MY300X MY200XS |
25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25AMP FAST RECOVERY FULL WAVE BRIDGE RECTIFIER Single Phase Bridge
|
MICROSEMI CORP-COLORADO MICROSEMI[Microsemi Corporation]
|
KBL405G KBL407G KBL401G KBL402G |
Single Phase 4.0AMPS. Glass Passivated Bridge Rectifiers 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Taiwan Semiconductor Company, Ltd
|
MB258 MB152 MB2505 MB251 MB2510 MB254 MB256 |
SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
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RECTRON[Rectron Semiconductor]
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