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FD500JV-90DA02 - HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE

FD500JV-90DA02_4708903.PDF Datasheet


 Full text search : HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE


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HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
15GN01MA VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
Sanyo Semicon Device
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EXAR[Exar Corporation]
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
HG-1012JA HG-2012JA (HG-1012JA / HG-2012JA) High Stability High Frequency Oscillator
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ETC[ETC]
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SANYO[Sanyo Semicon Device]
HCP0704 HCP0704-1R0-R HCP0704-1R8-R HCP0704-2R3-R 1 ELEMENT, 3.3 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0704, ROHS COMPLIANT
High Current, High Frequency, Power Inductors
Cooper Bussmann, Inc.
 
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FD500JV-90DA02 afe + homeplug av FD500JV-90DA02 integrated gigabit FD500JV-90DA02 molex FD500JV-90DA02 speed FD500JV-90DA02 oscillator
FD500JV-90DA02 rohm FD500JV-90DA02 Filter FD500JV-90DA02 control FD500JV-90DA02 Switch FD500JV-90DA02 texas
 

 

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