| PART |
Description |
Maker |
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27SS08561M HY27US08561M |
NAND Flash - 256Mb
|
Hynix Semiconductor
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K8P5616UZB |
256Mb B-die Page NOR FLASH
|
Samsung semiconductor
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
