| PART |
Description |
Maker |
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KBE00G003M-D411 KBE00G003M |
NAND 512Mb*2 Mobile SDRAM 256Mb*2
|
SAMSUNG[Samsung semiconductor]
|
| KBE00S003M KBE00S003M-D411 |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K8A56ETC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
| K8P5516UZB |
256Mb B-die NOR FLASH
|
Samsung semiconductor
|
| HY27UF082G2A HY27UF162G2A HY27UF082G2A-TCB HY27UF0 |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
256M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH
FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY27UF082G2B HY27UF162G2B HY27UF082G2B-F |
2Gb NAND FLASH
256M X 8 FLASH 3.3V PROM, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
