| PART |
Description |
Maker |
| S200-3-W1-22-9 S200-1-W1-22-9 S200-5-W1-22-9 S200- |
SOLDERSLEEVE SHIELD TERMINATOR WITH LEADS IMMERSION RESISTANT, 200 DEG C ROHS COMPLIANT
|
Tyco Electronics
|
| KNM20S14 KNM30S14 |
1x4 Monoblock Immersion Proof Keypad
|
Purdy Electronics Corporation
|
| NTCAIMME3 NTCAIMME3C90686 |
NTC Thermistors, Miniature Immersion Sensor
|
Vishay Siliconix
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MPXHZ6115A MPXHZ6115AC6U MPXAZ6115A MPXAZ6115A6T1 |
Media Resistant and High Temperature Accuracy Integrated Pressure Sensor
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
CAP 68UF 6V 20% TANT SMD-6032-28 TR-7
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR11 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 200 |
Resistant to tears and punctures
|
Laird Tech Smart Techno...
|
