| PART |
Description |
Maker |
| 1N4246GP 1N4247GP 1N4248GP 1N4245 1N4245GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
|
Vishay
|
| R4000 |
High Voltage Rectifier Reverse Voltage 4000V Forward Current 0.2 A
|
Rugao Dachang Electroni...
|
| 2CL71B |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 8KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| BYV29SERIES UG8FT UGB8GT |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns
|
Vishay
|
| 1N5617GP 1N5619GP 1N5615GP 1N5623GP 1N5621GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 800V
|
Vishay
|
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
|
Motorola
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| HER103G HER108G HER101G HER102G HER104G HER105G HE |
Octal D-type Transparent Latches With 3-State Outputs 20-CFP -55 to 125
GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER, Reverse Voltage - 50 to 1000 Volts, Forward Current - 1.0Ampere
|
上海朗硕科技有限公司
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| NTE5327 NTE5326 NTE5328 |
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 800V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 600V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 1000V.
|
NTE Electronics
|
| TC1279-5ENB TC1278 TC1278-10ENB TC1278-15ENB TC127 |
3-Pin Reset Monitors for 5V Systems 3引脚复位监控器的5V系统
Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):3A; Non Repetitive Forward Surge Current Max, Ifsm:150A; Reverse Recovery Time, trr:50ns; Forward Voltage Max, VF:1V
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
