| PART |
Description |
Maker |
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| AP50G60W-HF AP50G60W-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Speed Switching
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| AP30G120BSW-HF AP30G120BSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
High Speed Switching
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
