| PART |
Description |
Maker |
| EM484M3244VTA-75F EM481M3244VTA-75FE EM482M3244VTA |
128Mb (1M】4Bank】32) Synchronous DRAM
128Mb (1M×4Bank×32) Synchronous DRAM
128Mb (1M隆驴4Bank隆驴32) Synchronous DRAM
|
Eorex Corporation
|
| EM48AM1644LBB-75FE EM48AM1644LBB-7FE EM48AM1644LBB |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM48AM1644VBA-6FE EM48AM1644VBA-75FE EM48AM1644VBA |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM488M1644LBC EM488M1644LBC-6F |
128Mb (2M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM488M1644VTD-75F EM488M1644VTD-7F |
128Mb (2Mx4Bankx16) Synchronous DRAM
|
Eorex Corporation
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S56323PF-FG K4S56323PF-F90 K4S56323PF-F75 K4S563 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4M56323PG-FHE_G75 K4M56323PG-FE_G75 K4M56323PG-FC |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Elite Semiconductor Memory Technology, Inc.
Marvell Semiconductor, Inc.
|
| NT128S64V88C0G-75B NT128S64V88C0G-7K NT128S64V88C0 |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
