| PART |
Description |
Maker |
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| SB30-04A |
Schottky Barrier Diode 40V, 3.0A Rectifier
40V, 3.0A Rectifier(高频整流应用的重复反向电40V，平均整流电.0A 整流
40V, 3.0A Rectifier(高频整流应用的重复反向电0V，平均整流电.0A 整流
40V/ 3.0A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CDBQC0240L-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=0.2A
|
Comchip Technology
|
| CDBV6-00340TI-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
| CDBER40-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=0.2A
|
Comchip Technology
|
| CDBA5819-G |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=1A
|
Comchip Technology
|
| FGA90N33ATD11 FGA90N33ATDTU |
330V, 90A PDP Trench IGBT
|
Fairchild Semiconductor
|
| SSE90N10-14 |
90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SSE90P06-08P |
-90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
