| PART |
Description |
Maker |
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP10N10 SPB10N10 SPI10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL
SIPMOS Power-Transistor
SIPMOS功率晶体
|
Infineon Technologies AG
|
| BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL
SIPMOS Power Transistor
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IBM13M16734BCA |
16M x 72 1-Bank Registered SDRAM Module(16M x 72 1组寄存同步动态RAM模块)
|
IBM Microeletronics
|
