| PART |
Description |
Maker |
| 2SA1432 |
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1721 2SA172107 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SC3672 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示，NIXIE TYBE驱动，阴极射线管亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TYBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| R9220 |
PHOTOMULTIPLIER TUBE High QE Multialkali Photocathode New Electro-Optical Design
|
Hamamatsu Photonics
|
| R6504 R4504 |
Spectral responce:300-650nm; between anode and cathode:2300Vdc; 0.1mA; photomultiplier tube
|
HAMAMATSU[Hamamatsu Corporation]
|
| C1206X104K3GECAUTO |
ESD SMD Auto C0G, Ceramic, Electro Static Discharge, 0.1 uF, 10%, 25 V, C0G, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade, 1206
|
Kemet Corporation
|
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| P4C164L-25JC P4C164L-25LC P4C164L-25PC P4C164-25LC |
x8 SRAM
1.5A MOSFET Drvr W/Boost, Inv, -40C to 85C, 16-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, -40C to 125C, 8-DFN, TUBE
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, TUBE
1.5A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE x8的SRAM
|
Rochester Electronics, LLC
|
