| PART |
Description |
Maker |
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| IS61LF12832A IS61LF12832A-6.5B2 IS61LF12832A-6.5B3 |
128K X 32, 128K X 36, 256K X 18 4 MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM（FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM）的
|
Cypress Semiconductor Corp.
|
| GS840H18AB-100 GS840H36AB-100I GS840H32AB-180 GS84 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 12 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
| 25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V
128K SPI serial CMOS EEPROM 2.5-6.0V
SPI Serial EEPROM SPI串行EEPROM
128K/256K-BitSPISerialCMOSE2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128K SPI serial CMOS EEPROM 1.8-6.0V
256K SPI serial CMOS EEPROM 2.5-6.0V
128K/256K-Bit SPI Serial CMOS E2PROM
|
http://
STMicroelectronics N.V.
Semtech, Corp.
Abracon, Corp.
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| GS84032AT-100 GS84036AT-150 GS84036AT-150I GS84018 |
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
ETC
|
| IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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