| PART |
Description |
Maker |
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| STGF10NB60SD 9581 |
N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT
From old datasheet system
N-CHANNEL 600V 10A TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RJH60F6BDPQ-A0 |
600V - 45A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F5BDPQ-A0 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGD6NC60HD07 STGD10NC60KDT4 STGD10NC60KD STGD6NC6 |
N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT
N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| RJH60A83RDPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| AOK10B60D |
600V, 10A Alpha IGBT with Diode
|
Alpha & Omega Semiconductors
|
