| PART |
Description |
Maker |
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| KM23C8105D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ACT-SF2816N-39F18C ACT-SF2816N-39F18I ACT-SF2816N- |
ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module
|
http://
|
| AT49BV8192A-11CI |
EEPROM|FLASH|512KX16/1MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Air Cost Control
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM39LV80090Y EM39LV800 EM39LV80055RD EM39LV80055RH |
8M Bits (512Kx16) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| KM23C8105ET KM23C8105DET KM23C8105DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| LH28F800BGHE |
IC,EEPROM,NOR FLASH,512KX16,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
sharp
|
| EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时57055555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57205555ns 128Kx32 SRAM的模块（低功耗的CMOS28Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒））
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation
TE Connectivity, Ltd.
|
