| PART |
Description |
Maker |
| APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M07JVR APT10M07 |
POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10M09LVR APT10M09B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| STD9N10-1 STD9N10T4 STD9N10 |
N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR N沟道100V 0.23欧姆- 9A条的DPAK /像是iPak功率MOS器件
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1055DPB-00-J5 RJK1055DPB-15 |
100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching
100V, 23A, 17m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STB30N10 6216 |
From old datasheet system
N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| STD6N10 STD6N10-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| FQI44N10 FQB44N10 FQB44N10TM |
100V N-Channel QFET
100V N-Channel MOSFET 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
