| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Vishay Siliconix
Philips Semiconductors
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
| 3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF1105WR BF1105 BF1105R |
CONNECTOR
N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
