| PART |
Description |
Maker |
| BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM
8k隆驴8 bit electrically erasable PROM
|
Rohm
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| AM2864BE |
8K X 8-Bit Electrically EPROM
|
AMD
|
| BR24L32F-W BR24L32-W BR24L32FJ-W |
4k×8 bit electrically erasable PROM
|
Rohm
|
| BR24L02 BR24L02FJ-W BR24L02FVM-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L08-W07 BR24L08F-W BR24L08FJ-W BR24L08FV-W BR2 |
1024】8 bit electrically erasable PROM
|
Rohm
|
| BR34L02FV-W |
256 bit Electrically Erasable PROM
256? bit Electrically Erasable PROM
|
Rohm CO.,LTD.
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
