| PART |
Description |
Maker |
| DSEE15-06CC |
HiPerDynFRED Epitaxial Diode(正向电流15AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流15A的HiPerDynFRED外延型二极管) 15 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| DSEA16-06AC |
HiPerDynFRED Epitaxial Diode(正向电流16AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流16A的HiPerDynFRED外延型二极管) 8 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| DSEE29-06CC |
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 30 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1N4148D2B-JQRS.GRPC 1N4148D2A |
0.2 A, 75 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
SILICON EPITAXIAL PLANAR DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| HVD142 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
From old datasheet system
|
Hitachi Semiconductor
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| 1N4148CSM |
SILICON EPITAXIAL PLANAR DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
|
