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S29AS016J - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory

S29AS016J_4820394.PDF Datasheet


 Full text search : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory
 Product Description search : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory


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AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).2伏的CMOS只引导扇区闪
Advanced Micro Devices, Inc.
EN71NS128B0-7DCWP EN71NS128B011 Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
Eon Silicon Solution Inc.
AM29LV800B-100 AM29LV800B-120 AM29LV800B-150 AM29L 8 Megabit (1048576 x 8-Bit/524288 x 16-Bit) CMOS 3.0 Volt-only Sectored Flash Memory
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SPANSION
http://
S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位12k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位512k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
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AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
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8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
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Advanced Micro Devices, Inc.
AM29LV160MT70RWAI AM29LV160MB35EI AM29LV160MT35EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory 16兆位米8 1个M x 16位)的MirrorBit3.0伏,只引导扇区闪
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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From old datasheet system
AMD Inc
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AMD Inc
28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
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Maxwell Technologies, Inc
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Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
 
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