PART |
Description |
Maker |
2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39 MAX 3000A CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一c)| TO - 220AB现有 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)| TO - 39封装 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
ZXTN5551FLTA ZXTN5551FL |
160V, SOT23, NPN High voltage transistor
|
Diodes Incorporated Zetex Semiconductors
|
ZXTN5551GTA ZXTN5551GTC ZXTN5551G |
160V, SOT223, NPN high voltage transistor
|
Diodes Incorporated Zetex Semiconductors
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
CSA916LA |
0.750W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 0.050A Ic, 50 - hFE
|
Continental Device India Limited
|
2SD1868B 2SD1869 |
Silicon NPN Transistor TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-226VAR 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)|26VAR
|
Hitachi Semiconductor TE Connectivity, Ltd.
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CD2383Y |
0.700W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 160 - 320 hFE
|
Continental Device India Limited
|
CSA1220AO CSA1220AY CSA1220AR |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.2A I(C) | TO-126 晶体管|晶体管|进步党| 160V五(巴西)总裁| 1.2AI(丙)|26
|
Electronic Theatre Controls, Inc.
|