PART |
Description |
Maker |
MTW24N40E-D |
Power MOSFET 24 Amps, 400 Volts N-Channel TO-247
|
ON Semiconductor
|
MTW16N40E-D |
Power MOSFET 16 Amps, 400 Volts N-Channel TO-247
|
ON Semiconductor
|
NTP10N40-D |
Power MOSFET 10 Amps, 400 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V,P通道,SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23 Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 20V P-ch HD3e SOT223
|
ONSEMI ON Semiconductor
|
NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts 32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
SFS2329 SFS2326 SFS2327 SFS2328 |
1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
CS55B CS55D |
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|
SFS2540 SFS2510 SFS2520 SFS2525 SFS2530 |
25 AMPS 100 ─ 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER 25 AMPS 100 Α 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|