| PART |
Description |
Maker |
| CLE234E |
Very High Output Aluminum Gallium Arsenide Quad chip IRED Array
|
Clairex Technologies, Inc
|
| CLE334W |
Very High Output Aluminum Gallium Arsenide Quad chip IRED Array
|
Clairex Technologies, Inc
Clairex Technologies, I...
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CLE435 |
Red LED, Aluminum Gallium Arsenide Dome Lens Can, Hermetically Sealed
|
Clairex Technologies, Inc
|
| GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier
4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10007 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
