PART |
Description |
Maker |
RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大 5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Single-band power amplifiers The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
RFSP2020 PRFS-P2020-005 PRFS-P2020-006 PRFS-P2020- |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... Single-band power amplifiers 2.4-2.5 GHz Power Amplifier
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
ES0012 |
High Power Switch 4 GHz to 8 GHz
|
Micronetics, Inc.
|
ES0309-20 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
EL0037 |
High Power Limiters 2.7 GHz to 2.9 GHz
|
Micronetics, Inc.
|
LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫,600 W/700 W连续,分之为重点,高功率增益 6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN 6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp. NEC[NEC]
|
INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大 3V Fixed Gain. High Isolation amplifier 的DC - 2.5 GHz3伏,高隔离硅射频放大器(直流.5 GHz3伏,高隔离硅射频集成电路放大器) 0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard) AGILENT TECHNOLOGIES INC
|
SST12LP07A-QXBE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
Microchip Technology
|
SST12LP14C-QVCE-K SST12LP14C SST12LP14C-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|