| PART |
Description |
Maker |
| XN04212 XN4212 |
Silicon NPN epitaxial planer transistor
Composite Device - Composite Transistors
|
Panasonic Semiconductor
|
| XN04215 XN4215 |
Composite Device - Composite Transistors
Silicon NPN epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XP04115 XP4115 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XN0121M |
Composite Device - Composite Transistors 复合设备-复合晶体
Silicon NPN epitaxial planar type
|
Panasonic Industrial Solutions
Panasonic Semiconductor
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RT3YA7M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
| XN0A312 XN1A312 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
| XN6214 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
| XN01114 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
